PART |
Description |
Maker |
MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE CASE 1112, 2 PIN SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
NXP Semiconductors N.V. M/A-COM Technology Solutions, Inc.
|
BAT15-014 BAT15-044 BAT15-074 BAT15-104 BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 硅肖特基二极管(低搅拌机应用障碍密封二极管频率高0 GHz的陶瓷封装) RES, 18 OHM 1% 1/8W SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MPE-29G |
90V0A,Schottky Barrier Diodes(90V0A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE Power Surface Mount 90V, 20A Schottky barrier diode in TO220S package
|
Sanken Electric Co., Ltd. SANKEN[Sanken electric]
|
CBS10S30 |
Schottky Barrier Diode Silicon Epitaxial Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
CBS05F30 CBS05F30-14 |
Schottky Barrier Diode Silicon Epitaxial Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
KDR322 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)] Korea Electronics (KEC)
|
STPSC806 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
STPSC1006 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
FME-220A |
Schottky Barrier Diode - 90V/100V 100V, 20A Schottky barrier diode in TO220F package 100V/ 20A Schottky barrier diode in TO220F package 100V, 20A,Schottky Barrier Diode(100V,20A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE, TO-220AB
|
SANKEN[Sanken electric] Sanken Electric Co., Ltd.
|